BC489RL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 100mA, 1A.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.The part has a transition frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BC489RL1G Features
the DC current gain for this device is 60 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 200MHz
BC489RL1G Applications
There are a lot of ON Semiconductor BC489RL1G applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
