BD434 Overview
In this device, the DC current gain is 40 @ 10mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 200mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As a result, the part has a transition frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BD434 Features
the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD434 Applications
There are a lot of STMicroelectronics BD434 applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
