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ZXT13P40DE6TC

ZXT13P40DE6TC

ZXT13P40DE6TC

Diodes Incorporated

ZXT13P40DE6TC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXT13P40DE6TC Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case SOT-23-6
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Terminal FormGULL WING
Reach Compliance Code compliant
Base Part Number ZXT13P40D
Pin Count6
JESD-30 Code R-PDSO-G6
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 1.1W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 240mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 3A
Transition Frequency 115MHz
Frequency - Transition 115MHz
RoHS StatusRoHS Compliant
In-Stock:3124 items

ZXT13P40DE6TC Product Details

ZXT13P40DE6TC Overview


This device has a DC current gain of 300 @ 1A 2V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.In this part, there is a transition frequency of 115MHz.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

ZXT13P40DE6TC Features


the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 240mV @ 300mA, 3A
a transition frequency of 115MHz

ZXT13P40DE6TC Applications


There are a lot of Diodes Incorporated ZXT13P40DE6TC applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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