2SB1216T-H Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 200mA, 2A.With the emitter base voltage set at -6V, an efficient operation can be achieved.In the part, the transition frequency is 130MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
2SB1216T-H Features
the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz
2SB1216T-H Applications
There are a lot of ON Semiconductor 2SB1216T-H applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
