2SA2012-TD-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 500mA 2V DC current gain.A collector emitter saturation voltage of -260mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 210mV @ 30mA, 1.5A.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 350MHz.During maximum operation, collector current can be as low as 5A volts.
2SA2012-TD-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 210mV @ 30mA, 1.5A
the emitter base voltage is kept at 5V
a transition frequency of 350MHz
2SA2012-TD-E Applications
There are a lot of ON Semiconductor 2SA2012-TD-E applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
