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IAUC120N04S6L009ATMA1

IAUC120N04S6L009ATMA1

IAUC120N04S6L009ATMA1

Infineon Technologies

IAUC120N04S6L009ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

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IAUC120N04S6L009ATMA1 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Operating Temperature-55°C~175°C TJ
Series OptiMOS™-6
Part StatusActive
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 150W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 960m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 2V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 7806pF @ 25V
Current - Continuous Drain (Id) @ 25°C 150A Tc
Gate Charge (Qg) (Max) @ Vgs 128nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
In-Stock:2488 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.95000$2.95
500$2.9205$1460.25
1000$2.891$2891
1500$2.8615$4292.25
2000$2.832$5664
2500$2.8025$7006.25

IAUC120N04S6L009ATMA1 Product Details

IAUC120N04S6L009ATMA1 Description


IAUC120N04S6L009ATMA1 developed by Bosch Sensortec is a type of OptiMOS® N-channel power transistor. It is characterized by superior thermal resistance, 175°C operating temperature, and 100% avalanche tested. The IAUC120N04S6L009ATMA1 power transistor is optimized for automotive applications. It is available in the PG-TDSON-8 package so as to save board space.



IAUC120N04S6L009ATMA1 Features


Package: PG-TDSON-8

100% avalanche tested

Superior thermal resistance

Pb-free lead plating

175°C operating temperature



IAUC120N04S6L009ATMA1 Applications


Automotive applications


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