2N7002V Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout, yielding one of the world's lowest on-resistance and gate charges. They are therefore suitable for the most demanding high-efficiency converters.
2N7002V Features
ESD Protected
Low RDS(on)
Surface Mount Package
2V Prefix for Automotive and Other Applications Requiring Unique
The site and Control Change Requirements; AEC?Q101 Qualified and
PPAP Capable
These Devices are Pb?Free, Halogen Free/BFR Free, and are
RoHS Compliant
2N7002V Applications
Low Side Load Switch
Level Shift Circuits
DC?DC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
