IRLHS6376TRPBF

Name: IRLHS6376TRPBF
Brand: Infineon Technologies
SKU: IRLHS6376TRPBF
Price: 0.77000 USD
Availability: InStock

new-10%

IRLHS6376TRPBF

Manufacturer part number:IRLHS6376TRPBF

Manufacturer:Infineon Technologies

Description:IRLHS6376TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLHS6376TRPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-VDFN Exposed Pad
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	1.5W
Base Part Number	IRLHS6376
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Case Connection	DRAIN
Turn On Delay Time	4.4 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	63m Ω @ 3.4A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	2.8nC @ 4.5V
Rise Time	11ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	9.4 ns
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	3.6A
Threshold Voltage	800mV
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	3.4A
Drain-source On Resistance-Max	0.082Ohm
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	800 mV
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free