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SI7913DN-T1-GE3

SI7913DN-T1-GE3

SI7913DN-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 5A PPAK 1212-8

SOT-23

SI7913DN-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8 Dual
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2015
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 37MOhm
Subcategory Other Transistors
Max Power Dissipation1.3W
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number SI7913
Pin Count8
JESD-30 Code S-XDSO-C6
Qualification StatusNot Qualified
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation1.3W
Case Connection DRAIN
Turn On Delay Time20 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 37m Ω @ 7.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5A
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Rise Time70ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) -7.4A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.04mm
Length 3.05mm
Width 3.05mm
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5147 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.743272$0.743272
10$0.701200$7.012
100$0.661509$66.1509
500$0.624066$312.033
1000$0.588741$588.741

About SI7913DN-T1-GE3

The SI7913DN-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 2P-CH 20V 5A PPAK 1212-8.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI7913DN-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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