2N5210TA Overview
This device has a DC current gain of 200 @ 100μA 5V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 1mA, 10mA.An emitter's base voltage can be kept at 4.5V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 100mA.As you can see, the part has a transition frequency of 30MHz.The breakdown input voltage is 45V volts.Maximum collector currents can be below 100mA volts.
2N5210TA Features
the DC current gain for this device is 200 @ 100μA 5V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 100mA
a transition frequency of 30MHz
2N5210TA Applications
There are a lot of ON Semiconductor 2N5210TA applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
