MJD32CT4 Overview
In this device, the DC current gain is 10 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of -1.2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -3A current rating.This device can take an input voltage of 100V volts before it breaks down.Collector current can be as low as 3A volts at its maximum.
MJD32CT4 Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
MJD32CT4 Applications
There are a lot of STMicroelectronics MJD32CT4 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
