50C02CH-TL-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 10mA 2V.The collector emitter saturation voltage is 100mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 100mV @ 10mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.An input voltage of 50V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
50C02CH-TL-E Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 100mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
50C02CH-TL-E Applications
There are a lot of ON Semiconductor 50C02CH-TL-E applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
