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FJAF4210OTU

FJAF4210OTU

FJAF4210OTU

ON Semiconductor

FJAF4210OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJAF4210OTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Number of Pins 3
Weight 6.962g
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -140V
Max Power Dissipation80W
Current Rating-10A
Frequency 30MHz
Number of Elements 1
Element ConfigurationSingle
Power Dissipation80W
Transistor Application AMPLIFIER
Gain Bandwidth Product30MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 3A 4V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 500mA, 5A
Collector Emitter Breakdown Voltage140V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage-500mV
Collector Base Voltage (VCBO) -200V
Emitter Base Voltage (VEBO) -6V
hFE Min 50
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:6568 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$7.183840$7.18384
10$6.777208$67.77208
100$6.393592$639.3592
500$6.031691$3015.8455
1000$5.690274$5690.274

FJAF4210OTU Product Details

FJAF4210OTU Overview


This device has a DC current gain of 70 @ 3A 4V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 500mA, 5A.Keeping the emitter base voltage at -6V can result in a high level of efficiency.The current rating of this fuse is -10A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 30MHz is present in the part.When collector current reaches its maximum, it can reach 10A volts.

FJAF4210OTU Features


the DC current gain for this device is 70 @ 3A 4V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at -6V
the current rating of this device is -10A
a transition frequency of 30MHz

FJAF4210OTU Applications


There are a lot of ON Semiconductor FJAF4210OTU applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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