2N2906 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N2906 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Supplier Device Package
TO-18
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
2N2906
Power - Max
400mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 10V
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
600mA
RoHS Status
Non-RoHS Compliant
In-Stock:1886 items
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Quantity
Unit Price
Ext. Price
2N2906 Product Details
2N2906 Description
2N2906 transistor was designed for use in high-speed switch circuits, DC-to-VHF amplifiers, and circuits for complementary. It is silicon-based PNP epitaxial plane transistors developed to handle small signals and general-purpose switching applications.
2N2906 Features
Collector-Emitter Volt (Vceo): 40V Collector-Base Volt (Vcbo): 60V Collector Current (Ic): 0.6A hfe: 40-120 @ 150mA Power Dissipation (Ptot): 400mW Current-Gain-Bandwidth (ftotal): 200MHz
2N2906 Applications
High–speed switching circuits DC to VHF amplifier applications Complementary circuitry
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