JAN2N3868S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 1.5A 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 250mA, 2.5A.Keeping the emitter base voltage at 4V allows for a high level of efficiency.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
JAN2N3868S Features
the DC current gain for this device is 30 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 4V
JAN2N3868S Applications
There are a lot of Microsemi Corporation JAN2N3868S applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
