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JAN2N4235

  • JAN2N4235 - JAN2N4235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
  • JAN2N4235 - JAN2N4235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

JAN2N4235

JAN2N4235

Microsemi Corporation

JAN2N4235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N4235 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Number of Pins 3
PackagingBulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature125°C
Min Operating Temperature -55°C
HTS Code8541.29.00.95
Max Power Dissipation1W
Terminal Position BOTTOM
Terminal FormWIRE
Reference Standard MIL-19500/580
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
JEDEC-95 Code TO-205AD
Collector Base Voltage (VCBO) 60V
DC Current Gain-Min (hFE) 20
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:192 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$45.31280$4531.28

JAN2N4235 Product Details

JAN2N4235 Overview


A maximum collector current of 1A volts can be achieved.

JAN2N4235 Features



JAN2N4235 Applications


There are a lot of Microsemi Corporation JAN2N4235 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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