15C02MH-TL-E Overview
In this device, the DC current gain is 300 @ 50mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 280mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 280mV @ 20mA, 400mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Collector current can be as low as 1A volts at its maximum.
15C02MH-TL-E Features
the DC current gain for this device is 300 @ 50mA 2V
a collector emitter saturation voltage of 280mV
the vce saturation(Max) is 280mV @ 20mA, 400mA
the emitter base voltage is kept at 5V
15C02MH-TL-E Applications
There are a lot of ON Semiconductor 15C02MH-TL-E applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
