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2N5880

2N5880

2N5880

Microsemi Corporation

Bipolar Transistors - BJT Power BJT

SOT-23

2N5880 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Number of Pins 3
Transistor Element Material SILICON
PackagingBulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
HTS Code8541.29.00.95
Max Power Dissipation160W
Terminal Position BOTTOM
Terminal FormPIN/PEG
JESD-30 Code O-MBFM-P2
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 15A
DC Current Gain-Min (hFE) 20
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:181 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$39.28050$3928.05

About 2N5880

The 2N5880 from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features Bipolar Transistors - BJT Power BJT.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2N5880, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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