Welcome to Hotenda.com Online Store!

logo
userjoin
Home

BD140G

BD140G

BD140G

ON Semiconductor

BD140G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD140G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation1.25W
Peak Reflow Temperature (Cel) 260
Current Rating1.5A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BD140
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.25W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage80V
Collector Emitter Saturation Voltage500mV
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:10029 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.754200$0.7542
10$0.711509$7.11509
100$0.671235$67.1235
500$0.633241$316.6205
1000$0.597397$597.397

BD140G Product Details

BD140G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.When collector current reaches its maximum, it can reach 1.5A volts.

BD140G Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A

BD140G Applications


There are a lot of ON Semiconductor BD140G applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

Get Subscriber

Enter Your Email Address, Get the Latest News