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PSMN005-25D,118

PSMN005-25D,118

PSMN005-25D,118

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 5.8m Ω @ 25A, 10V ±15V 3500pF @ 20V 60nC @ 5V 25V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

PSMN005-25D,118 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series TrenchMOS™
Published 1998
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN
Additional FeatureLOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 125W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 20V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 5V
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±15V
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.0075Ohm
Pulsed Drain Current-Max (IDM) 240A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 120 mJ
RoHS StatusROHS3 Compliant
In-Stock:4713 items

PSMN005-25D,118 Product Details

PSMN005-25D,118 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 120 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3500pF @ 20V maximal input capacitance.A device can conduct a maximum continuous current of [75A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 240A.The DS breakdown voltage should be maintained above 25V to maintain normal operation.To operate this transistor, you will need a 25V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).

PSMN005-25D,118 Features


the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 240A.
a 25V drain to source voltage (Vdss)


PSMN005-25D,118 Applications


There are a lot of NXP USA Inc.
PSMN005-25D,118 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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