PMBFJ309,215

Name: PMBFJ309,215
Brand: NXP USA Inc.
SKU: PMBFJ309,215
Availability: InStock

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Manufacturer part number:PMBFJ309,215

Manufacturer:NXP USA Inc.

Description:PMBFJ309,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:PMBFJ309,215 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2001
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Additional Feature	LOW NOISE
HTS Code	8541.21.00.75
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	MBFJ309
Pin Count	3
JESD-30 Code	R-PDSO-G3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Operating Mode	DEPLETION MODE
Power - Max	250mW
FET Type	N-Channel
Transistor Application	AMPLIFIER
Input Capacitance (Ciss) (Max) @ Vds	5pF @ 10V
JEDEC-95 Code	TO-236AB
DS Breakdown Voltage-Min	25V
FET Technology	JUNCTION
Power Dissipation-Max (Abs)	0.25W
Feedback Cap-Max (Crss)	2.5 pF
Highest Frequency Band	VERY HIGH FREQUENCY B
Current - Drain (Idss) @ Vds (Vgs=0)	12mA @ 10V
Voltage - Cutoff (VGS off) @ Id	1V @ 1μA
Voltage - Breakdown (V(BR)GSS)	25V
Resistance - RDS(On)	50Ohm
RoHS Status	ROHS3 Compliant

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