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2N5639_D26Z

2N5639_D26Z

2N5639_D26Z

ON Semiconductor

2N5639_D26Z datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

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2N5639_D26Z Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2003
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2N5639
Power - Max 350mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 12V VGS
Current - Drain (Idss) @ Vds (Vgs=0) 25mA @ 20V
Voltage - Breakdown (V(BR)GSS) 30V
Resistance - RDS(On) 60Ohm
In-Stock:3250 items

2N5639_D26Z Product Details

2N5639_D26Z Description


2N5639_D26Z is a 30V N-Channel JFET Chopper Transistor. The Onsemi N-Channel Junction Field Effect Transistor, depletion mode (Type A) 2N5639_D26Z is designed for chopper and high-speed switching applications, such as audio and signal processing. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor 2N5639_D26Z is in the TO-3P-3 package with 350mW power dissipation.



2N5639_D26Z Features


Low Drain-Source "ON" Resistance:

RDS(on) = 30Ω for 2N5638

RDS(on) = 60Ω for 2N5639

Low Reverse Transfer Capacitance Crss = 4.0 pF (Max) @ f = 1.0 MHz

Fast Switching Characteristics tr = 5.0 ns (Max) (2N5638)

Pb-Free Packages are Available



2N5639_D26Z Applications


Audio

Signal Processing

Automotive

Infotainment & cluster

Industrial

Appliances

Personal electronics

Gaming


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