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PMBFJ113,215

PMBFJ113,215

PMBFJ113,215

NXP USA Inc.

PMBFJ113,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available on our website

SOT-23

PMBFJ113,215 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 1997
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code8541.21.00.95
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBFJ113
Pin Count3
JESD-30 Code R-PDSO-G3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Operating ModeDEPLETION MODE
Power - Max 300mW
FET Type N-Channel
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 6pF @ 10V VGS
JEDEC-95 Code TO-236AB
Drain-source On Resistance-Max 100Ohm
DS Breakdown Voltage-Min 40V
FET Technology JUNCTION
Power Dissipation-Max (Abs) 0.3W
Current - Drain (Idss) @ Vds (Vgs=0) 2mA @ 15V
Voltage - Cutoff (VGS off) @ Id 3V @ 1μA
Voltage - Breakdown (V(BR)GSS) 40V
Resistance - RDS(On) 100Ohm
RoHS StatusROHS3 Compliant
In-Stock:1783 items

PMBFJ113,215 Product Details

PMBFJ113,215 Description

N – Channel JFET ?It consists of an n – type silicon bar forming the conduction channel for the charge carriers. The pn – junction forming diodes are connected internally and a common terminal called GATE is taken out from the p - Region. The other two terminals viz. Source and Drain are taken out from the bar.



PMBFJ113,215 Applications


Analog switches

Choppers

Commutators

Multiplexers

Thin and thick film hybrids.

PMBFJ113,215 Features


High-speed switching

Interchangeability of drain and source connections

Low RDSon at zero gate voltage (< 30 W for PMBFJ111).


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