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IRF6608TR1

IRF6608TR1

IRF6608TR1

Infineon Technologies

MOSFET N-CH 30V 13A DIRECTFET

SOT-23

IRF6608TR1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric ST
Operating Temperature-40°C~150°C TJ
PackagingTape & Reel (TR)
Published 2004
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.1W Ta 42W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2120pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A Ta 55A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±12V
RoHS StatusNon-RoHS Compliant
In-Stock:1975 items

About IRF6608TR1

The IRF6608TR1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 13A DIRECTFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF6608TR1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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