Name: PHD14NQ20T,118
Brand: NXP USA Inc.
SKU: PHD14NQ20T,118
Availability: InStock

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PHD14NQ20T,118

Manufacturer part number:PHD14NQ20T,118

Manufacturer:NXP USA Inc.

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 230mOhm @ 7A, 10V ±20V 1500pF @ 25V 38nC @ 10V 200V TO-252-3, DPak (2 Leads + Tab), SC-63

Case Package:SOT-23

Datasheet:PHD14NQ20T,118 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	DPAK
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchMOS™
Published	1997
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	125W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	230mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	14A Tc
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

PHD14NQ20T,118 Product Details

PHD14NQ20T,118 Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1500pF @ 25V.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (5V 10V), this device helps reduce its overall power consumption.