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MRFE6VP5300GNR1

MRFE6VP5300GNR1

MRFE6VP5300GNR1

NXP USA Inc.

RF MOSFET Transistors 1.8--600 MHz 300 W CW 50 V

SOT-23

MRFE6VP5300GNR1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case TO-270BB
PackagingTape & Reel (TR)
Published 2013
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated 133V
HTS Code8541.29.00.40
Peak Reflow Temperature (Cel) 260
Frequency 230MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MRFE6VP5300
Current - Test 100mA
Transistor Type LDMOS (Dual)
Gain 27dB
Power - Output 300W
Voltage - Test 50V
RoHS StatusROHS3 Compliant
In-Stock:112 items

Pricing & Ordering

QuantityUnit PriceExt. Price
500$53.95146$26975.73

About MRFE6VP5300GNR1

The MRFE6VP5300GNR1 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF MOSFET Transistors 1.8--600 MHz 300 W CW 50 V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MRFE6VP5300GNR1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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