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AFM907NT1

AFM907NT1

AFM907NT1

NXP USA Inc.

AFM907NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

AFM907NT1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Package / Case 16-VDFN Exposed Pad
PackagingTape & Reel (TR)
Published 2006
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated 30V
Current Rating (Amps) 10μA
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 136MHz~941MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Current - Test 100mA
Transistor Type LDMOS
Power - Output 8.4W
Voltage - Test 10.8V
RoHS StatusROHS3 Compliant
In-Stock:2434 items

Pricing & Ordering

QuantityUnit PriceExt. Price

AFM907NT1 Product Details

AFM907NT1 Description

AFM907NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes AFM907NT1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFM907NT1 has the common source configuration.

AFM907NT1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

AFM907NT1 Applications

ISM applications

DC large signal applications


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