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MRF8VP13350NR3

MRF8VP13350NR3

MRF8VP13350NR3

NXP USA Inc.

RF MOSFET Transistors BL RF

SOT-23

MRF8VP13350NR3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case OM780-4
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated 100V
HTS Code8541.29.00.75
Peak Reflow Temperature (Cel) 260
Frequency 1.3GHz
[email protected] Reflow Temperature-Max (s) 40
Current - Test 100mA
Transistor Type LDMOS (Dual)
Gain 19.2dB
Power - Output 350W
Voltage - Test 50V
RoHS StatusROHS3 Compliant
In-Stock:72 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$142.643996$142.643996
10$134.569808$1345.69808
100$126.952649$12695.2649
500$119.766650$59883.325
1000$112.987406$112987.406

About MRF8VP13350NR3

The MRF8VP13350NR3 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF MOSFET Transistors BL RF.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MRF8VP13350NR3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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