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BLF574XRS,112

BLF574XRS,112

BLF574XRS,112

Ampleon USA Inc.

RF FET LDMOS 110V 23DB SOT1214B

SOT-23

BLF574XRS,112 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Package / Case SOT-1214B
PackagingTray
Published 2010
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated 110V
Frequency 225MHz
Current - Test 100mA
Transistor Type LDMOS (Dual), Common Source
Gain 23.5dB
Power - Output 600W
Voltage - Test 50V
RoHS StatusROHS3 Compliant
In-Stock:91 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$161.03000$161.03
20$154.22400$3084.48

BLF574XRS,112 Product Details

Description:

The Ampleon BLF574XRS,112 is a RF FET LDMOS (Field Effect Transistor) with a drain-source voltage of 110V and a gain of 23dB. It is packaged in a SOT1214B package and is suitable for use in RF applications.

Features:

• High gain of 23dB
• Drain-source voltage of 110V
• Low noise figure
• High power handling capability
• High linearity
• Low distortion
• High efficiency
• Low thermal resistance
• High reliability
• RoHS compliant

Applications:

The Ampleon BLF574XRS,112 is suitable for use in a variety of RF applications, including:

• Cellular base stations
• Wi-Fi access points
• Radio transmitters
• Radar systems
• Satellite communications
• Automotive applications
• Industrial applications

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