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MRF8S26120HR3

MRF8S26120HR3

MRF8S26120HR3

NXP USA Inc.

RF MOSFET Transistors HV8 2.6GHZ 27W NI780

SOT-23

MRF8S26120HR3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case SOT-957A
Surface MountYES
Transistor Element Material SILICON
PackagingTape & Reel (TR)
Published 2010
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code 5A991
Voltage - Rated 65V
HTS Code8541.29.00.75
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Frequency 2.69GHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MRF8S26120
JESD-30 Code R-CDFM-F2
Qualification StatusNot Qualified
Operating Temperature (Max) 225°C
Number of Elements 1
Configuration SINGLE
Operating ModeENHANCEMENT MODE
Case Connection SOURCE
Current - Test 900mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 15.6dB
DS Breakdown Voltage-Min 65V
Power - Output 28W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS StatusROHS3 Compliant
In-Stock:3814 items

About MRF8S26120HR3

The MRF8S26120HR3 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF MOSFET Transistors HV8 2.6GHZ 27W NI780.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MRF8S26120HR3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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