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NE3509M04-A

NE3509M04-A

NE3509M04-A

CEL

RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET

SOT-23

NE3509M04-A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Package / Case SOT-343F
Number of Pins 4
Supplier Device Package M04
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -65°C
Voltage - Rated 4V
Current Rating (Amps) 60mA
Frequency 2GHz
Base Part Number NE3509
Power Dissipation125mW
Current - Test 10mA
Transistor Type HFET
Continuous Drain Current (ID) 60mA
Gate to Source Voltage (Vgs) 3V
Gain 17.5dB
Drain to Source Breakdown Voltage 2V
Power - Output 11dBm
Noise Figure0.4dB
Voltage - Test 2V
Min Breakdown Voltage 4V
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1458 items

About NE3509M04-A

The NE3509M04-A from CEL is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NE3509M04-A, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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