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MRF8P20140WGHSR3

MRF8P20140WGHSR3

MRF8P20140WGHSR3

NXP USA Inc.

FET RF 2CH 65V 1.91GHZ NI780S

SOT-23

MRF8P20140WGHSR3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case NI-780S-4
Surface MountYES
PackagingTape & Reel (TR)
Published 2006
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 65V
HTS Code8541.29.00.75
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Frequency 1.88GHz~1.91GHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MRF8P20140
Operating Temperature (Max) 125°C
Current - Test 500mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual)
Gain 16dB
Power - Output 24W
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 140W
Voltage - Test 28V
RoHS StatusROHS3 Compliant
In-Stock:4686 items

Pricing & Ordering

QuantityUnit PriceExt. Price
250$93.19816$23299.54

About MRF8P20140WGHSR3

The MRF8P20140WGHSR3 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features FET RF 2CH 65V 1.91GHZ NI780S.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MRF8P20140WGHSR3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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