MRF6VP121KHR6 Description
Transistors with RF power intended for applications using frequencies between 965 and 1215 MHz. These gadgets are appropriate for pulsed applications. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.
MRF6VP121KHR6 Features
? characterized by large-signal series equivalent impedance parameters
? Internally Matching for User-Friendliness
? Up to a Maximum of 50 VDD Operation Qualified
? Protection from Integrated ESD
? Created with Push-Pull Operation in Mind
? Improved Class C Operation with a Wider Negative Gate-Source Voltage Range
? RoHS conformant
? on reel-to-reel tape. 150 Units per 56 mm, 13 inch Reel, R6 Suffix.
MRF6VP121KHR6 Applications
Switching applications
