MRF6S20010GNR1 Description
MRF6S20010GNR1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MRF6S20010GNR1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6S20010GNR1 has the common source configuration.
MRF6S20010GNR1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
MRF6S20010GNR1 Applications
ISM applications
DC large signal applications
