MW6S010NR1 Description
MW6S010NR1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MW6S010NR1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MW6S010NR1 has the common source configuration.
MW6S010NR1 Features
Qualified Up to a Maximum of 32 VDD Operation
On-Chip RF Feedback for Broadband Stability
Integrated ESD Protection
Characterized with Series Equivalent Large-Signal Impedance Parameters
RoHS Compliant
MW6S010NR1 Applications
ISM applications
DC large signal applications
