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MMRF5014HR5

MMRF5014HR5

MMRF5014HR5

NXP USA Inc.

MMRF5014HR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MMRF5014HR5 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Package / Case NI-360H-2SB
PackagingTape & Reel (TR)
Published 2013
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 125V
HTS Code8541.29.00.75
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 2.5GHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Current - Test 350mA
Transistor Type HEMT
Gain 18dB
Power - Output 125W
Voltage - Test 50V
RoHS StatusROHS3 Compliant
In-Stock:55 items

Pricing & Ordering

QuantityUnit PriceExt. Price
50$348.19400$17409.7

MMRF5014HR5 Product Details

MMRF5014HR5 Description

MMRF5014HR5 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications. The special low thermal resistance packaging makes MMRF5014HR5 transistor suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MMRF5014HR5 has the common source configuration.

MMRF5014HR5 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging for lower junction temperatures

MMRF5014HR5 Applications

ISM applications

DC large signal applications


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