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IGN1011L1200

IGN1011L1200

IGN1011L1200

Integra Technologies Inc.

GAN, RF POWER TRANSISTOR, L-BAND

SOT-23

IGN1011L1200 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Surface MountYES
Transistor Element Material GALLIUM NITRIDE
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Position DUAL
Terminal FormFLAT
JESD-30 Code R-CDFM-F2
Operating Temperature (Min) -55°C
Number of Elements 1
Configuration SINGLE
Operating ModeDEPLETION MODE
Case Connection SOURCE
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
DS Breakdown Voltage-Min 180V
FET Technology HIGH ELECTRON MOBILITY
Highest Frequency Band L B
RoHS StatusROHS3 Compliant
In-Stock:44 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$914.14000$914.14
500$904.9986$452499.3
1000$895.8572$895857.2
1500$886.7158$1330073.7
2000$877.5744$1755148.8
2500$868.433$2171082.5

About IGN1011L1200

The IGN1011L1200 from Integra Technologies Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features GAN, RF POWER TRANSISTOR, L-BAND.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IGN1011L1200, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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