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AFT05MS006NT1

AFT05MS006NT1

AFT05MS006NT1

NXP USA Inc.

AFT05MS006NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

AFT05MS006NT1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case PLD-1.5W
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e3
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated 30V
HTS Code8541.29.00.75
Peak Reflow Temperature (Cel) 260
Frequency 520MHz
[email protected] Reflow Temperature-Max (s) 40
Current - Test 100mA
Transistor Type LDMOS
Gain 18.3dB
Power - Output 6W
Voltage - Test 7.5V
RoHS StatusROHS3 Compliant
In-Stock:1379 items

Pricing & Ordering

QuantityUnit PriceExt. Price

AFT05MS006NT1 Product Details


AFT05MS006NT1 Description

AFT05MS006NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes AFT05MS006NT1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT05MS006NT1 has the common source configuration.

AFT05MS006NT1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

AFT05MS006NT1 Applications

ISM applications

DC large signal applications


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