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MRFE6VS25GNR1

MRFE6VS25GNR1

MRFE6VS25GNR1

NXP USA Inc.

MRFE6VS25GNR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MRFE6VS25GNR1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case TO-270BA
Surface MountYES
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated 133V
HTS Code8541.29.00.75
Subcategory FET General Purpose Power
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Frequency 512MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MRFE6VS25
JESD-30 Code R-PDFM-F2
Operating Temperature (Max) 150°C
Operating Temperature (Min) -40°C
Number of Elements 1
Configuration Single
Operating ModeENHANCEMENT MODE
Current - Test 10mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 25.4dB
DS Breakdown Voltage-Min 133V
Power - Output 25W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 50V
Power Dissipation Ambient-Max 25W
RoHS StatusROHS3 Compliant
In-Stock:256 items

Pricing & Ordering

QuantityUnit PriceExt. Price
500$21.46590$10732.95

MRFE6VS25GNR1 Product Details

MRFE6VS25GNR1 Description


Broadband and narrowband ISM, broadcast, and aerospace applications using RF power transistors operating at frequencies between 1.8 to 2000 MHz. The increased ruggedness platform from NXP was used to create these devices, which can be used in situations where strong VSWRs are present.



MRFE6VS25GNR1 Features


  • The operational frequency range is broad.

  • Extreme toughness

  • Unmatched, capable of operating in a very broad band

  • Enhancements to integrated stability

  • minimal thermal resistance

  • Extension of the ESD protection circuit



MRFE6VS25GNR1 Applications


Switching applications


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