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PMV37EN2R

PMV37EN2R

PMV37EN2R

Nexperia USA Inc.

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 36m Ω @ 4.5A, 10V ±20V 209pF @ 15V 6.3nC @ 10V 30V TO-236-3, SC-59, SOT-23-3

SOT-23

PMV37EN2R Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2014
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional FeatureLOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 510mW Ta 5W Tc
Operating ModeENHANCEMENT MODE
Turn On Delay Time3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 36m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 209pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.5A Ta
Gate Charge (Qg) (Max) @ Vgs 6.3nC @ 10V
Rise Time12ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 20V
RoHS StatusROHS3 Compliant
In-Stock:18666 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.351984$0.351984
10$0.332061$3.32061
100$0.313265$31.3265
500$0.295532$147.766
1000$0.278804$278.804

PMV37EN2R Product Details

PMV37EN2R Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 209pF @ 15V.This device conducts a continuous drain current (ID) of 4.5A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 11 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 3 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

PMV37EN2R Features


a continuous drain current (ID) of 4.5A
the turn-off delay time is 11 ns
a 30V drain to source voltage (Vdss)


PMV37EN2R Applications


There are a lot of Nexperia USA Inc.
PMV37EN2R applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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