FZT758TA Overview
This device has a DC current gain of 40 @ 200mA 10V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 100mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.Parts of this part have transition frequencies of 50MHz.This device can take an input voltage of 400V volts before it breaks down.A maximum collector current of 500mA volts is possible.
FZT758TA Features
the DC current gain for this device is 40 @ 200mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
FZT758TA Applications
There are a lot of Diodes Incorporated FZT758TA applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
