PBSS8110D,115 Overview
In this device, the DC current gain is 150 @ 250mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.As a result, the part has a transition frequency of 100MHz.As a result, it can handle voltages as low as 100V volts.A maximum collector current of 1A volts can be achieved.
PBSS8110D,115 Features
the DC current gain for this device is 150 @ 250mA 10V
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS8110D,115 Applications
There are a lot of Nexperia USA Inc. PBSS8110D,115 applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
