TIP31B Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.Breakdown input voltage is 80V volts.Product comes in the supplier's device package TO-220-3.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
TIP31B Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
the supplier device package of TO-220-3
TIP31B Applications
There are a lot of ON Semiconductor TIP31B applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
