PBSS5330X,135 Overview
This device has a DC current gain of 175 @ 1A 2V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 320mV @ 300mA, 3A.The base voltage of the emitter can be kept at -6V to achieve high efficiency.The part has a transition frequency of 100MHz.There is a breakdown input voltage of 30V volts that it can take.When collector current reaches its maximum, it can reach 3A volts.
PBSS5330X,135 Features
the DC current gain for this device is 175 @ 1A 2V
the vce saturation(Max) is 320mV @ 300mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 100MHz
PBSS5330X,135 Applications
There are a lot of Nexperia USA Inc. PBSS5330X,135 applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
