PBSS4041PT,215 Overview
In this device, the DC current gain is 150 @ 1A 2V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 360mV @ 300mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A transition frequency of 150MHz is present in the part.This device can take an input voltage of 60V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 2.7A volts at Single BJT transistors maximum.
PBSS4041PT,215 Features
the DC current gain for this device is 150 @ 1A 2V
the vce saturation(Max) is 360mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS4041PT,215 Applications
There are a lot of Nexperia USA Inc. PBSS4041PT,215 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
