Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FZT753TC

FZT753TC

FZT753TC

Diodes Incorporated

FZT753TC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT753TC Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -100V
Max Power Dissipation2W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-2A
Frequency 140MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT753
Number of Elements 1
Element ConfigurationSingle
Power Dissipation2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product140MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage100V
Transition Frequency 140MHz
Collector Emitter Saturation Voltage-300mV
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -2A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:8270 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.755000$0.755
10$0.712264$7.12264
100$0.671947$67.1947
500$0.633913$316.9565
1000$0.598031$598.031

FZT753TC Product Details

FZT753TC Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 2V.The collector emitter saturation voltage is -300mV, giving you a wide variety of design options.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at -2A for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).As you can see, the part has a transition frequency of 140MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

FZT753TC Features


the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 140MHz

FZT753TC Applications


There are a lot of Diodes Incorporated FZT753TC applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

Get Subscriber

Enter Your Email Address, Get the Latest News