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2SB1730TL

2SB1730TL

2SB1730TL

ROHM Semiconductor

2SB1730TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SB1730TL Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e2
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN COPPER
Subcategory Other Transistors
Voltage - Rated DC -12V
Max Power Dissipation400mW
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Current Rating-2A
Frequency 360MHz
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SB1730
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation400mW
Transistor Application AMPLIFIER
Gain Bandwidth Product360MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 180mV @ 50mA, 1A
Collector Emitter Breakdown Voltage12V
Transition Frequency 360MHz
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:36837 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.164279$5.164279
10$4.871961$48.71961
100$4.596190$459.619
500$4.336028$2168.014
1000$4.090593$4090.593

2SB1730TL Product Details

2SB1730TL Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 200mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 6V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).A transition frequency of 360MHz is present in the part.This device can take an input voltage of 12V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

2SB1730TL Features


the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is -2A
a transition frequency of 360MHz

2SB1730TL Applications


There are a lot of ROHM Semiconductor 2SB1730TL applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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