FDB3632 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDB3632 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 20 hours ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Weight
1.31247g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
9MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
44A
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
310W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
310W
Case Connection
DRAIN
Turn On Delay Time
30 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9m Ω @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Rise Time
39ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
46 ns
Turn-Off Delay Time
96 ns
Continuous Drain Current (ID)
80A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Dual Supply Voltage
100V
Max Junction Temperature (Tj)
175°C
Nominal Vgs
4 V
Height
5.08mm
Length
10.67mm
Width
9.65mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1919 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
800
$2.12210
$1697.68
FDB3632 Product Details
FDB3632 Description
FDB3632 100V, 80A, 9m N-Channel PowerTrench? MOSFET The latest shielded gate PowerTrench? MOSFET may significantly increase the efficiency of synchronous rectification by combining a reduced QSYNC and soft reverse-recovery intrinsic body diode performance with quick switching.
FDB3632 Features
RoHS Compliant
Low Miller Charge
Low QRR Body Diode
QG(tot) = 84nC (Typ.) @ VGS = 10V
RDS(ON) = 7.5mΩ (Typ.) @ VGS = 10V, ID = 80A
UIS Capability (Single Pulse and Repetitive Pulse)
FDB3632 Applications
Workstation
Server & Mainframe
Other Data Processing
AC-DC Merchant Power Supply - Servers & Workstations
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