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CSD19537Q3T

CSD19537Q3T

CSD19537Q3T

Texas Instruments

MOSFET N-CH 100V 50A 8VSON

SOT-23

CSD19537Q3T Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Resistance 12.1mOhm
Terminal Finish Matte Tin (Sn)
Additional FeatureAVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormNO LEAD
Reach Compliance Code not_compliant
Base Part Number CSD19537
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 83W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 50V
Current - Continuous Drain (Id) @ 25°C 50A Ta
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time3ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 50A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9.7A
Pulsed Drain Current-Max (IDM) 219A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 55 mJ
Feedback Cap-Max (Crss) 17.3 pF
Length 3.3mm
Width 3.3mm
Thickness 1mm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:4450 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.63000$1.63
500$1.6137$806.85
1000$1.5974$1597.4
1500$1.5811$2371.65
2000$1.5648$3129.6
2500$1.5485$3871.25

About CSD19537Q3T

The CSD19537Q3T from Texas Instruments is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 50A 8VSON.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the CSD19537Q3T, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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