BC849BW,115 Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As you can see, the part has a transition frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC849BW,115 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC849BW,115 Applications
There are a lot of Nexperia USA Inc. BC849BW,115 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
